Paper Title:
Relaxation of Extrinsic Excitation in Si Doped with III and V Group Impurities
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 65-66)
Edited by
Gordon Davies
Pages
271-280
DOI
10.4028/www.scientific.net/MSF.65-66.271
Citation
Y.E. Pokrovskii, O.I. Smirnova, "Relaxation of Extrinsic Excitation in Si Doped with III and V Group Impurities", Materials Science Forum, Vols. 65-66, pp. 271-280, 1991
Online since
January 1991
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Price
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