Relaxation of Extrinsic Excitation in Si Doped with III and V Group Impurities |
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| Journal | Materials Science Forum (Volumes 65 - 66) |
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| Volume | Shallow Impurities in Semiconductors IV |
| Edited by | Gordon Davies |
| Pages | 271-280 |
| DOI | 10.4028/www.scientific.net/MSF.65-66.271 |
| Citation | Ya.E. Pokrovskii et al., 1991, Materials Science Forum, 65-66, 271 |
| Authors | Ya.E. Pokrovskii, O.I. Smirnova |
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