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Defects-Recognition, Imaging and Physics in Semiconductors XIV

Volume 725
doi: 10.4028/www.scientific.net/MSF.725
Paper Titles published in this Main Theme:
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Paper Title Page

Preface, Message and Committee

Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography

Authors: Ryohei Tanuma, Daisuke Mori, Isaho Kamata, Hidekazu Tsuchida

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Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography

Authors: Hirotaka Yamaguchi, Hirofumi Matsuhata

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Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy

Authors: Yoshihiro Sugawara, Y. Yao, Yukari Ishikawa, Katsunori Danno, Hiroshi Suzuki, Takeshi Bessho, Yoichiro Kawai, Yuichi Ikuhara

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Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers

| Authors: Isaho Kamata, Xuan Zhang, Hidekazu Tsuchida

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Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon Carbide

Authors: Tatsuya Okada, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Ryota Kashino, Takuto Ito

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Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing

Authors: Yong Zhao Yao, Koji Sato, Yoshihiro Sugawara, Yukari Ishikawa, Yoshihiro Okamoto, Noritaka Hayashi

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Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings

Authors: Xuan Zhang, Masahiro Nagano, Hidekazu Tsuchida

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Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method

Authors: Shinkichi Hamada, Hisashi Yoshioka, Hiroshi Kawami, Nobuhiko Nakamura, Yoshitaka Setoguchi, Toru Matsunami, Kimito Nishikawa, Toshiyuki Isshiki

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Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC

Authors: Koji Maeda, Rii Hirano, Yuki Sato, Michio Tajima

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