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Gettering and Defect Engineering in Semiconductor Technology

Solid State Phenomena Volumes 32 - 33

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• p577 Micro-Raman Investigations of Elastic and Plastic Strain Relief in Si_1-xGe_x-Heterostructures   [ 246 K ]
  Authors: B. Dietrich, E. Bugiel, H.J. Osten, P. Zaumseil
• p583 Raman Study of the Phonon-Plasmon Modes in the Short Period GaAs/AlAs Superlattices   [ 213 K ]
  Authors: M.D. Efremov, Vladimir A. Volodin, V.V. Bolotov
• p589 Positron Annihilation on Thermal Defects in Cz-Si and Fz-Si   [ 196 K ]
  Authors: N.Yu. Arutyunov
• p595 Characterization of MBE Grown Si/Si_1-xGe_x/Si Structures Using n⁺p-Diodes   [ 337 K ]
  Authors: K. Schmalz, H. Rücker, Hermann G. Grimmeiss, B. Dietrich, H. Frankenfeld, W. Mehr, H.J. Osten, P. Schley
• p601 Investigations on Surface and Bulk Semiconductor Properties Using Wavelength Dependent TRMC Measurements   [ 379 K ]
  Authors: G. Betz, W. Gründler, J. Quick, Hans Richter
• p609 Investigation of Recombination Properties of Ti Double Donor in Si   [ 165 K ]
  Authors: G. Ferenczi, T. Pavelka, P. Tütto, L. Köster
• p615 Mapping Interfacial Roughness and Composition in Elemental Semiconductor Systems   [ 55 K ]
  Authors: A. Ourmazd, P. Schwander, Christian Kisielowski-Kemmerich, Michael Seibt, F.H. Baumann, Y.O. Kim
• p619 The Influence of the Electron Subsystem Excitation on the Kinetics and Dynamics of Dislocations   [ 234 K ]
  Authors: V.A. Makara, L.P. Steblenko, E.G. Robur