HomeA. Kakanakova-Georgieva

Papers by Author: A. Kakanakova-Georgieva

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SiC and III-Nitride Growth in Hot-Wall CVD Reactor

Authors: Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad Hassan, Anne Henry, Ivan G. Ivanov, A. Kakanakova-Georgieva, P.O.Å. Persson, Qamar-ul Wahab

Abstract: The Hot-Wall CVD reactor was developed for the thick epitaxial SiC layers needed for high voltage power devices but its inherent better properties – better cracking efficiency of the precursor gases and better lateral and vertical temperature homogeneity – should also influence the growth of other materials such as the III-nitrides. We will give some examples of thick SiC layers grown on either off- or on-axis substrates with this technique. We will also show that high-quality III-nitride materials can be grown.

Properties of AlN Layers Grown by Sublimation Epitaxy

Authors: M. Beshkova, Z. Zakhariev, Jens Birch, A. Kakanakova-Georgieva, Rositza Yakimova

995

Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC

Authors: A. Kakanakova-Georgieva, Urban Forsberg, Christer Hallin, P.O.Å. Persson, L. Storasta, G.R. Pozina, Jens Birch, L. Hultman, Erik Janzén

991

Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers

Authors: L. Kasamakova-Kolaklieva, Rositza Yakimova, Roumen Kakanakov, A. Kakanakova-Georgieva, Mikael Syväjärvi, Erik Janzén

709

Growth of AlN Films by Hot-Wall CVD and Sublimation Techniques: Effect of Growth Cell Pressure

Authors: A. Kakanakova-Georgieva, Urban Forsberg, Björn Magnusson, Rositza Yakimova, Erik Janzén

1469

Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC

Authors: Liliana Kassamakova, Roumen Kakanakov, Rositza Yakimova, A. Kakanakova-Georgieva, Mikael Syväjärvi, L. Wilzén, Erik Janzén

929

Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers

Authors: Rositza Yakimova, Henrik Jacobsson, Mikael Syväjärvi, A. Kakanakova-Georgieva, T. Iakimov, Charíya Virojanadara, Leif I. Johansson, Erik Janzén

283

Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques

Authors: A. Kakanakova-Georgieva, Rositza Yakimova, Jie Zhang, L. Storasta, Mikael Syväjärvi, Erik Janzén

259

Physical and Electrical Characterization of WN Schottky Contacts on 4H-SiC

Authors: Olivier Noblanc, C. Arnodof, S. Cassette, Christian Brylinski, A. Kakanakova-Georgieva, Ts. Marinova, Liliana Kassamakova, R. Kabanakov, Béla Pécz, A. Sulyok, György Z. Radnóczi

817

Domain Occurance in SiC Epitaxial Layers Grown by Sublimation

Authors: M. Tuominen, Rositza Yakimova, A. Kakanakova-Georgieva, Mike F. MacMillan, Mikael Syväjärvi, Erik Janzén

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