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Papers by Author: A.S. Zubrilov

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On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals

Authors: Alexander A. Lebedev, Pavel L. Abramov, A.S. Zubrilov, Elena V. Bogdanova, Sergey P. Lebedev, Natasha V. Seredova, Alla S. Tregubova

Abstract: It is demonstrated that polytype-homogeneous, thick (>100 m) epitaxial 3C-SiC layers of good quality with diameters of no less than 25 mm can be grown on 6H-SiC substrates by sublimation epitaxy in vacuum. These layers can be used as seeds for growing bulk 3C-SiC crystals by modified Lely method.

Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

Authors: Alexander A. Lebedev, O. Yu. Ledyaev, Anatoly M. Strel'chuk, Alexey N. Kuznetsov, A.E. Cherenkov, A.E. Nikolaev, A.S. Zubrilov, Natasha V. Seredova, A.A. Volkova

Abstract: The investigated AlGaN epitaxial layers were grown by hydride vapor phase epitaxy (HVPE) on a commercial P+ SiC substrate or on an N+ SiC Lely substrate with a p+ SiC layer previously grown by sublimation epitaxy. To investigate the electrical characteristics of the n-p heterojunction, mesa structures of 100, 200 and 1500 microns in diameter were fabricated by reactive ion etching. Investigation of electrical characteristics shows good quality of grown n- AlGaN/p-SiC heterojunctions. This shows applicability of this technological combination for producing n-AlGaN/p-SiC bipolar or FET transistors.

1537

Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

Authors: Evgenia V. Kalinina, G. Kholuyanov, G. Onushkin, D.V. Davydov, Anatoly M. Strel'chuk, A.S. Zubrilov, Anders Hallén, Andrey O. Konstantinov, V.A. Skuratov, J. Staňo

467

4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

Authors: Evgenia V. Kalinina, A.S. Zubrilov, V. Solov'ev, N.I. Kuznetsov, Anders Hallén, Andrey O. Konstantinov, S. Karlsson, S.V. Rendakova, Vladimir Dmitriev

505

Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

Authors: Evgenia V. Kalinina, A.S. Zubrilov, N.I. Kuznetsov, Irina P. Nikitina, Alla S. Tregubova, M.P. Shcheglov, V.Ya. Bratus

497

4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

Authors: N.I. Kuznetsov, A. Morozov, D. Bauman, V. Ivantsov, V. Sukhoveyev, Irina P. Nikitina, A.S. Zubrilov, S.V. Rendakova, Vladimir Dmitriev, D. Hofman, György Vida

229

Growth of SiC and GaN on Porous Buffer Layers

Authors: Marina G. Mynbaeva, N.S. Savkina, Alla S. Tregubova, M.P. Scheglov, Alexander A. Lebedev, A.S. Zubrilov, A. Titkov, A. Kryganovski, K. Mynbaev, Natasha V. Seredova, D. Tsvetkov, S. Stepanov, A.E. Cherenkov, I. Kotousova, Vladimir Dmitriev

225

Crystal Structure and Optical Properties of Bulk GaN Crystals Grown from a Melt at Reduced Pressure

Authors: V. Sukhoveyev, V. Ivantsov, A.S. Zubrilov, V. Nikolaev, Irina P. Nikitina, V. Bougrov, D. Tsvetkov, Vladimir Dmitriev

1331

Optically Transparent 6H-Silicon Carbide

Authors: Andrey Bakin, Sergey I. Dorozhkin, A.S. Zubrilov, N.I. Kuznetsov, Yuri M. Tairov