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Articles by author: A. van Veen

• An Electrostatic Variable Energy Positron Beam for Remoderation Experiments
  Published in: Positron Annihilation - ICPA-12 (p520)
• 2D-ACAR Investigations of PPT Aramid Fibres
  Published in: Positron Annihilation - ICPA-12 (p322)
• 2D-ACAR Measurements in Tungsten with Voids Decorated with Deuterium
  Published in: Positron Annihilation - ICPA-9 (p1205)
• Cavities in He-Implanted SiC
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p533)
• Cavity Formation in Helium-Implanted Silicon - Temperature Dependence
  Published in: Defects and Diffusion in Semiconductors (p37)
• Characterization of Defects at the Si/SiO₂ Interface of a Polysilicon Gated MOS System by Monoenergetic Positrons
  Published in: Positron Annihilation - ICPA-11 (p718)
• Combined Analysis of the S and W Parameters Obtained from Positron Annihilation Spectra
  Published in: Positron Annihilation - ICPA-12 (p646)
• Condensed Matter and Defect-Related Research at ICPA-13
  Published in: Positron Annihilation - ICPA-13 (p519)
• Decomposition of Doppler Broadened Annihilation Spectra
  Published in: Positron Annihilation - ICPA-11 (p793)
• Defects Created by Helium Implantation at Different Temperatures in Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p285)
• Dehydration of Gypsum Studied by Positron Annihilation Lifetime Technique
  Published in: Positron Annihilation - ICPA-11 (p402)
• Depth-Selective 2D-ACAR and Coincidence Doppler Investigation of Embedded Au Nanocrystals in MgO
  Published in: Positron Annihilation - ICPA-13 (p398)
• Depth-Selective 2D-ACAR with POSH: Application to Nanocavities Generated by Ion Implantation
  Published in: Positron Annihilation - ICPA-12 (p561)
• Influence of Depth in Helium Desorption from Cavities Induced by ³He Implantation in Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p303)
• Intense Positron Sources and their Applications
  Published in: Positron Annihilation - ICPA-12 (p415)