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Articles by author: Adam W. Saxler

• Electroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with Silicon and Magnesium Doped InGaN
  Published in: Defects in Semiconductors 19 (p1229)
• GaN Doped with Sulfur
  Published in: Defects in Semiconductors 19 (p1161)
• GaN Grown Using Trimethylgallium and Triethylgallium
  Published in: Defects in Semiconductors 19 (p1081)
• Generation and Properties of Semi-Insulating SiC Substrates
  Published in: Silicon Carbide and Related Materials - 1999 (p17)
• Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 1999 (p703)
• MicroRaman and Hall Effect Study of n-Type Bulk 4H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p707)
• Vanadium-free Semi-insulating 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials - 1999 (p21)