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Papers by Author: Adam W. Saxler

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MicroRaman and Hall Effect Study of n-Type Bulk 4H-SiC

Authors: M. Chafai, J. Jiménez, Enric Martín, W.C. Mitchel, Adam W. Saxler, Ronald Perrin

707

Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide

Authors: Michael A. Capano, James A. Cooper, M.R. Melloch, Adam W. Saxler, W.C. Mitchel

703

Vanadium-free Semi-insulating 4H-SiC Substrates

Authors: W.C. Mitchel, Adam W. Saxler, Ronald Perrin, Jonathan Goldstein, S.R. Smith, A.O. Evwaraye, J.S. Solomon, M.F. Brady, Valeri F. Tsvetkov, Calvin H. Carter Jr.

Generation and Properties of Semi-Insulating SiC Substrates

Authors: Shao Ping Wang, Adrian R. Powell, Joan M. Redwing, Eddie Piner, Adam W. Saxler

Electroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with Silicon and Magnesium Doped InGaN

Authors: Adam W. Saxler, K.S. Kim, D. Walker, P. Kung, Xue Ren Zhang, G.J. Brown, W.C. Mitchel, M. Razeghi

1229

GaN Doped with Sulfur

Authors: Adam W. Saxler, P. Kung, Xue Ren Zhang, D. Walker, J. Solomon, M. Ahoujja, W.C. Mitchel, H.R. Vydyanath, M. Razeghi

1161

GaN Grown Using Trimethylgallium and Triethylgallium

Authors: Adam W. Saxler, P. Kung, Xue Ren Zhang, D. Walker, J. Solomon, W.C. Mitchel, M. Razeghi

1081