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Articles by author: Akihiro Yauchi

• Solution Growth and Crystallinity Characterization of Bulk 6H-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p33)
• Solution Growth of 3C-SiC on 6H-SiC Using Si Solvent under N₂-He Atmosphere
  Published in: Silicon Carbide and Related Materials 2007 (p187)
• Solution Growth of 3C-SiC Single Crystals by Cold Crucible Technique
  Published in: Silicon Carbide and Related Materials 2007 (p191)
• Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique
  Published in: Silicon Carbide and Related Materials 2005 (p119)
• Solution Growth of Single Crystalline 6H-SiC from Si-Ti-C Ternary Solution
  Published in: Innovation in Ceramic Science and Engineering (p89)
• XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution
  Published in: Silicon Carbide and Related Materials 2006 (p303)