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Articles by author: Amitesh Shrivastava

• Hardness Variation in Undoped and Doped Mixed NaCl-NaBr Single Crystal
  Published in: Disordered Materials (p453)
• Inverted Pyramid Defects in 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2008 (p125)
• Investigation of Triangular Defects in 4H-SiC 4° Off Cut (0001) Si Face Epilayers Grown by CVD
  Published in: Silicon Carbide and Related Materials 2007 (p139)
• Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors
  Published in: Silicon Carbide and Related Materials 2008 (p291)
• Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2009 (p203)
• Variations in the Measured Carrier Lifetimes of n^- 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2007 (p489)
• Why Are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations During SiC Epitaxy?
  Published in: Silicon Carbide and Related Materials 2005 (p419)