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Articles by author: Andre Stesmans

• SiC/SiO₂ Interface States: Properties and Models
  Published in: Silicon Carbide and Related Materials 2004 (p563)
• 0 Surrounding of P_b Defects at the (111)Si/SiO₂ Interface
  Published in: Defects in Semiconductors 16 (p1415)
• Buried SiO₂ Films: Interfaces and Defects
  Published in: Defects in Insulating Materials (p1)
• Electron Spin Resonance Features of the P_b1 Interface Defect in Thermal (100)Si/SiO₂
  Published in: Defects in Semiconductors 19 (p1713)
• Electronic Properties of SiON/HfO₂ Insulating Stacks on 4H-SiC (0001)
  Published in: Silicon Carbide and Related Materials 2003 (p1361)
• Observation of Carbon Clusters at the 4H-SiC/SiO₂ Interface
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p857)
• On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C.
  Published in: Defects in Semiconductors 18 (p1147)
• Oxidation of Silicon Carbide: Problems and Solutions
  Published in: Silicon Carbide and Related Materials 2001 (p961)
• The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si
  Published in: Defects in Semiconductors 18 (p1515)