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Articles by author: Bernard Pichaud

• Advances in Structural Characterization of Thin Film Nanocrystalline Silicon for Photovoltaic Applications
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p33)
• Annihilation of Self-Interstitials by Dislocations in Silicon as Studied by Gold Diffusion
  Published in: Polycrystalline Semiconductors IV (p3)
• Dislocation Nucleation in Heteroepitaxial Semiconducting Films
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p251)
• Dislocation-Gold Interactions in FZ and CZ Silicon: The Role of Self-Interstitials
  Published in: Dislocations '93 (p491)
• Dynamical Study of Dislocations and 4H → 3C Transformation Induced by Stress in (11-20) 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p299)
• Evolution of Oxygen Associated Defects in Cz Silicon during Thermal Annealing Treatments: Comparison between Experiment and Simulation
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p188)
• Impact of a Cooling Process on the Dopant Activity of Platinum in Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p417)
• Impurity Effect on the Dislocation DLTS Spectrum in Silicon
  Published in: Polycrystalline Semiconductors V (p27)
• Investigation of Mechanical Stress-Induced Double Stacking Faults in (11-20) Highly N-Doped 4H-SiC Combining Optical Microscopy, TEM, Contrast Simulation and Dislocation Core Reconstruction
  Published in: Silicon Carbide and Related Materials 2005 (p379)
• Kinetic Reaction of the Formation of the Platinum Related Complex at the Origin of the p-Type Doping Effect in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p361)
• Luminescence of Dislocations and Oxide Precipitates in Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p273)
• Nickel Gettering in Silicon: Role of Oxygen
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p355)
• Segregation and Precipitation of Platinum Silicides in Si/SiO₂ Interfaces and Dislocations
  Published in: Polycrystalline Semiconductors III (p157)
• Structural and Thermal Studies of HfPd System Prepared by Mechanical Alloying
  Published in: Metastable, Mechanically Alloyed and Nanocrystalline Materials 1999 (p732)
• Study of Dislocation Mobility in 4H SiC by X-Ray Transmission Topography, Chemical Etching and Transmission Electron Microscopy
  Published in: Silicon Carbide and Related Materials 2003 (p355)