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Articles by author: Dae Hwan Kim

• Effect of Crucible Design on the Shape and the Quality in 6H-SiC Crystals Grown by Physical Vapor Transport
  Published in: Silicon Carbide and Related Materials 2003 (p103)
• Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation
  Published in: Silicon Carbide and Related Materials 2003 (p1181)
• Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor
  Published in: Silicon Carbide and Related Materials 2003 (p233)
• Improvement of the Reverse Characteristics of Ti/4H-SiC Schottky Barrier Diodes by Thermal Treatments
  Published in: Advances in Nanomaterials and Processing (p105)
• Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments
  Published in: Silicon Carbide and Related Materials 2003 (p1001)