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Papers by Author: E. Ntsoenzok

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Novel Low-K Dielectric Obtained by Xenon Implantation in SiO₂

Authors: H. Assaf, E. Ntsoenzok, M.O. Ruault, O. Kaïtasov

Abstract: We implanted 300keV Xenon in silicon oxide at doses ranging from 1x1016 to 5x1016/cm2. For the first time, we reported the formation and the thermal evolution of bubbles/cavities in SiO2. Characterization by cross-section transmission electron microscopy (XTEM) and Rutherford backscattering spectrometry (RBS) showed that bubbles/cavities remain present even after a 1100°C annealing, while Xe strongly desorbs out at that temperature. Our measurements provides unexpected dielectric constant (k) lower than 1.6. These results make this technique very attractive for low-k applications in Si technology. Keywords: low-k dielectric, rare gas implantation, silicon oxid.

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Contribution of X-Ray Diffraction Simulations to Experimental Study of High Energy He Implantation at High Dose in 4H-SiC at Room Temperature

Authors: Alain Declémy, A.A. Shiryaev, S. Stepanov, Jean François Barbot, Marie France Beaufort, Erwan Oliviero, E. Ntsoenzok, Thierry Sauvage

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Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon

Authors: C.L. Liu, Daniel Alquier, Frédéric Cayrel, E. Ntsoenzok, M.O. Ruault

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Modification of MeV He Implantation-Induced Cavities in Silicon by Hydrogen Plasma Treatment

Authors: C.L. Liu, E. Ntsoenzok, Marie France Barthe, P. Desgardin, S. Ashok, A. Vengurlekar, Daniel Alquier, M.O. Ruault

307

Nickel Gettering in Silicon: Role of Oxygen

Authors: G. Regula, R. El Bouayadi, Bernard Pichaud, E. Ntsoenzok

355

Influence of Depth in Helium Desorption from Cavities Induced by ³He Implantation in Silicon

Authors: R. Delamare, E. Ntsoenzok, F. Labohm, A. van Veen

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