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Articles by author: E.P. Carlson

• 4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer
  Published in: Silicon Carbide and Related Materials 2010 (p123)
• A New Method of Mapping and Counting Micropipes in SiC Wafers
  Published in: Silicon Carbide and Related Materials 2005 (p447)
• Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates
  Published in: Silicon Carbide and Related Materials 2005 (p443)
• Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates
  Published in: Silicon Carbide and Related Materials 2006 (p69)
• Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor
  Published in: Silicon Carbide and Related Materials 2005 (p175)
• Pendeo-Epitaxy^TM Process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials - 1999 (p1491)
• Scaling of Chlorosilane SiC CVD to Multi-Wafer Epitaxy System
  Published in: Silicon Carbide and Related Materials 2006 (p145)