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Articles by author: Erwin Schmitt

• Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions
  Published in: Silicon Carbide and Related Materials 2000 (p15)
• High Quality 100mm 4H-SiC Substrates with Low Resistivity
  Published in: Silicon Carbide and Related Materials 2009 (p3)
• Increase of SiC Substrate Resistance Induced by Annealing
  Published in: Silicon Carbide and Related Materials 2009 (p223)
• Investigations on Polytype Stability and Dislocation Formation in 4H-SiC Grown by PVT
  Published in: Silicon Carbide and Related Materials 2007 (p11)
• Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p57)
• Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p33)
• PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals
  Published in: Silicon Carbide and Related Materials - 2002 (p55)
• Quality Aspects for the Production of SiC Bulk Crystals
  Published in: Silicon Carbide and Related Materials 2006 (p3)