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Articles by author: Eugene E. Haller

• Carrier Localization in Gallium Nitride
  Published in: Defects in Semiconductors 18 (p31)
• Defect Formation and Electronic Transport at AlGaN/GaN Interfaces
  Published in: Defects in Semiconductors 19 (p1749)
• Defect Studies with Isotopically Designed Semiconductors
  Published in: Defects in Semiconductors 18 (p1491)
• Electric Field Broadening of Gallium Acceptor States in Compensated Ge: Ga, As
  Published in: Defects in Semiconductors 18 (p127)
• Electrical Activity and Diffusion of Shallow Acceptors in III-V Semiconductors
  Published in: Defects in Semiconductors 16 (p941)
• Electronic Raman Studies of Shallow Donors in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2005 (p579)
• Implantation Doping and Hydrogen Passivation of GaN
  Published in: Defects in Semiconductors 19 (p1099)
• Implantation of Carbon in GaAs and Compensating Native Defects
  Published in: Defects in Semiconductors 17 (p1535)
• Impurity-Defect Complexes in Neutron Transmutation Doped Gallium Arsenide and Germanium Crystals
  Published in: Defects in Semiconductors 18 (p1413)
• Ionization Energies of Phosphorus Donors in 6H-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p441)
• Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As
  Published in: Defects in Semiconductors 19 (p77)
• Isotopic Dependence of Near-Band-Gap Luminescence from Germanium
  Published in: Shallow Impurities in Semiconductors V (p111)
• Isotopic Shifts of the Rotational States of Interstitial Oxygen in Germanium
  Published in: Defects in Semiconductors 19 (p47)
• Matrix-Induced Isotope Shift of a Vibrational Mode of Interstitial Oxygen in Germanium
  Published in: Defects in Semiconductors 19 (p41)
• Microdefects in Nitrogen Doped FZ Silicon Revealed by Li⁺ Drifting
  Published in: Defects in Semiconductors 18 (p1761)