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Articles by author: Greg Dunne

• 3kV 4H-SiC Thyristors for Pulsed Power Applications
  Published in: Silicon Carbide and Related Materials 2009 (p1053)
• 950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability
  Published in: Silicon Carbide and Related Materials 2007 (p1131)
• Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2009 (p1005)
• Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers
  Published in: Silicon Carbide and Related Materials 2007 (p775)
• Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices
  Published in: Silicon Carbide and Related Materials 2009 (p805)
• High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p9)
• Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy
  Published in: Silicon Carbide and Related Materials - 1999 (p161)
• Interface Trap Density and Mobility Characterization of Silicon Carbide MOSFET Inversion Layers
  Published in: Silicon Carbide and Related Materials 2008 (p801)
• Performance and Reliability of SiC MOSFETs for High-Current Power Modules
  Published in: Silicon Carbide and Related Materials 2009 (p1123)
• Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices
  Published in: Silicon Carbide and Related Materials 2006 (p141)
• Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated Using Sodium Enhanced Oxidation Technique
  Published in: Silicon Carbide and Related Materials 2007 (p687)
• Wafer-Level Hall Measurement on SiC MOSFET
  Published in: Silicon Carbide and Related Materials 2009 (p979)