HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: H. Fujiwara

• Anisotropic ECR Plasma Etching with Low-Energy Ions
  Published in: Plasma Properties, Deposition and Etching (p39)
• Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2003 (p205)
• Femtosecond Spectroscopic Study for the Self-Trapping Process of Holes in Alkali Halides
  Published in: Defects in Insulating Materials (p561)
• Femtosecond Time-Resolved Spectroscopy for Lattice Relaxation Processes of Holes and Electron-Hole Pairs in Halide Crystals: The Dynamical Features
  Published in: Defects in Insulating Materials (p549)
• Growth Parameters Determining the Type of Grown-In Defects in Czockralski Silicon Crystals
  Published in: Defects in Semiconductors 18 (p1713)
• Impurity Behavior during Si Single Crystal Growth from the Melt
  Published in: Defects in Semiconductors 18 (p109)
• Nano-Grain Formation in a Fully Ferritic SUS 316L Austenitic Stainless Steel Produced by HS-PM Process
  Published in: Towards Innovation in Superplasticity II (p47)
• Nano-Grain Formation Mechanism in Nickel, SUS304L and SUS316L Powders by HS-PM Process
  Published in: Metastable, Mechanically Alloyed and Nanocrystalline Materials 2002 (p187)
• Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes
  Published in: Silicon Carbide and Related Materials 2004 (p151)