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Articles by author: H.H. Radamson

• Diffusion of Dopants and Impurities in Device Structures of SiC, SiGe and Si
  Published in: Diffusion in Materials DIMAT2000 (p597)
• Growth and Characterization of Boron-Doped Si_1-x-yGe_xC_y Layers Grown by Reduced Pressure Chemical Vapor Deposition
  Published in: Defects and Diffusion in Semiconductors - an Annual Retrospective VIII (p39)
• Phase Formation Sequence of Nickel Silicides from Rapid Thermal Annealing of Ni on 4H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p799)
• Phosphorus Diffusion in Si_1-x Ge_x
  Published in: Diffusion in Materials DIMAT2000 (p709)
• Radiation Induced Defect Levels in Highly Doped n-Type Si_1-xGe_x Strained Layers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p185)
• Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p613)