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Articles by author: Hans Richter

• Annealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p609)
• Composition Dependence of Hardness and Elastic Modulus in Si-Ge Measured by Nanoindentation - Possible Consequences for Elasto-Plastic Relaxation and Diffusion
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p509)
• Computer Modelling of SiO₂ Precipitation in Cz-Si Doped with Nitrogen
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p405)
• Computer-Aided Investigation of Grain Growth in Copper and Aluminium
  Published in: Grain Growth in Polycrystalline Materials I (p765)
• Cu Precipitation in Strained and Relaxing Ge_xSi_1-x Heteroepitaxial Layers
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p339)
• Developing of Ceramic Membranes for Nanofiltration
  Published in: Euro Ceramics V (p1715)
• Elastic and Plastic Stress Relaxation in Stripes and Circular Mesas
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p503)
• Equilibrium Critical Thickness of Strained Buried SiGe Layers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p149)
• FTIR Study of Precipitation of Implanted Nitrogen in CZ-Si Annealed under High Hydrostatic Pressure
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p157)
• Influence of Nitrogen on Dislocation Mobility in Czochralski Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p465)
• Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p229)
• Investigations on Surface and Bulk Semiconductor Properties Using Wavelength Dependent TRMC Measurements
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p601)
• Lattice Defects in High Quality As-Grown CZ Silicon, Studied with Ligth Scattering and Preferential Etching Techniques
  Published in: Defects in Semiconductors 18 (p1755)
• Misfit Strain Engineering in Heteroepitaxial Structures
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p123)
• Oxygen Precipitation in Nitrogen Doped CZ Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p17)