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Articles by author: Hideyo Okushi

• Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p435)
• Defect Characteristics in Sulfur-Implanted CVD Homoepitaxial Diamond
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p171)
• Defects Analysis of Diamond Films in Cross Section Using Cathodoluminescence and High-Resolution Transmission Electron Microscopy
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p197)
• Diamond Doped by Hot Ion Implantation
  Published in: Silicon Carbide and Related Materials 2007 (p1353)
• Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2001 (p851)
• Effect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS Structures
  Published in: Silicon Carbide and Related Materials - 1999 (p1283)
• Effect of Post-oxidation-annealing in Hydrogen on SiO₂/4H-SiC Interface
  Published in: Silicon Carbide and Related Materials - 1999 (p1073)
• Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High Temperature
  Published in: Silicon Carbide and Related Materials - 1999 (p865)
• Electrical Properties of Graphite/p-Type Homoepitaxial Diamond Contact
  Published in: Silicon Carbide and Related Materials 2001 (p945)
• Electrical Properties of Pt/Nb-Doped SrTiO₃ Schottky Junctions
  Published in: Asian Ceramic Science for Electronics III and Electroceramics in Japan XII (p463)
• Excitonic Emission from High-Quality Homoepitaxial Diamond Film
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p165)
• Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance
  Published in: Silicon Carbide and Related Materials 2001 (p1383)
• Formation and Relaxation of Hydrogen-Related Defects in the Subsurface Region of Diamond Films
  Published in: Defects in Semiconductors 19 (p745)
• Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process
  Published in: Silicon Carbide and Related Materials - 2002 (p725)
• High-Performance Surface-Channel Diamond Field-Effect Transistors
  Published in: Silicon Carbide and Related Materials 2000 (p815)