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Articles by author: Hiroshi Amano

• 6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method
  Published in: Silicon Carbide and Related Materials 2005 (p263)
• AlN and AlGaN by MOVPE for UV Light Emitting Devices
  Published in: Advances in Light Emitting Materials (p175)
• Carrier Localization in Gallium Nitride
  Published in: Defects in Semiconductors 18 (p31)
• Charactrization of Residual Transition Metal Ions in GaN and AIN
  Published in: Defects in Semiconductors 18 (p55)
• Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p335)
• Heteroepitaxy of Group III Nitrides for Device Applications
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1115)
• Iron Acceptors in Gallium Nitride (GaN)
  Published in: Defects in Semiconductors 17 (p93)
• Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport
  Published in: Silicon Carbide and Related Materials 2000 (p791)
• ODMR Studies of MOVPE-Grown GaN Epitaxial Layers
  Published in: Defects in Semiconductors 17 (p87)
• Photoluminescence and Electroluminescence Characterization of In_xGa_1-xN/In_yGa_1-yN Multiple Quantum Well Light Emitting Diodes
  Published in: Silicon Carbide and Related Materials 2001 (p1493)
• Radiative Recombination in InGaN/GaN Multiple Quantum Wells
  Published in: Silicon Carbide and Related Materials - 1999 (p1571)
• Room Temperature Photoluminescence Linewidth versus Material Quality of GaN
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1319)