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Papers by Author: Hiroshi Amano

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AlN and AlGaN by MOVPE for UV Light Emitting Devices

Authors: Hiroshi Amano, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki

Abstract: The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patterned template are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivity control of p-type AlGaN, particularly the realization of a high hole concentration, is essential for realizing high-efficiency UV and DUV LEDs and LDs.

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Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC

Authors: Satoshi Murata, Yoshihiro Nakamura, Tomohiko Maeda, Yoko Shibata, Mina Ikuta, Masaaki Sugiura, Shugo Nitta, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Masahiro Yoshimoto, Tomoaki Furusho, Hiroyuki Kinoshita

Abstract: The dependence of donor-acceptor pair (DAP) emission properties on impurity concentrations of N and B in 6H-SiC epilayers was investigated. Doped samples were grown by closed sublimation technique, and impurity concentrations were confirmed by secondary ion mass spectrometry (SIMS). Photoluminescence (PL) measurement results indicate that p-type 6H-SiC with NA>ND had extremely low DAP emission efficiency, whereas n-type 6H-SiC with NA

335

6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method

Authors: Y. Kawai, Tomohiko Maeda, Yoshihiro Nakamura, Yoji Sakurai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Masahiro Yoshimoto, Tomoaki Furusho, Hiroyuki Kinoshita, Hiromu Shiomi

Abstract: We demonstrate high-speed and high-quality 6H-SiC homoepitaxial growth on a 1°-off c-plane SiC substrate by a closed-space sublimation method. By optimizing the size of single-crystal source materials in the growth system, a high-quality 6H-SiC epilayer with an X-ray diffraction rocking curve (0006) full-width at the half maximum (FWHM) of 38 arcsec was obtained. We also carried out doping of nitrogen and boron during the growth of the SiC epilayer. A strong donor-acceptor pair (DAP) emission at a peak wavelength of 570 nm under excitation by a 395 nm nitride-based light-emitting diode (LED) was observed. The 6H-SiC with DAP emission is promising for use as a phosphor in a nitride-based LED, because high-quality nitride layers can be grown on the SiC substrates with small off-oriented angles.

263

Photoluminescence and Electroluminescence Characterization of In_xGa_1-xN/In_yGa_1-yN Multiple Quantum Well Light Emitting Diodes

Authors: Peder Bergman, G.R. Pozina, Bo Monemar, Satoshi Kamiyama, Motoaki Iwaya, Hiroshi Amano, Isamu Akasaki

1493

Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport

Authors: G.R. Pozina, Peder Bergman, Bo Monemar, Motoaki Iwaya, Shoji Nitta, Hiroshi Amano, Isamu Akasaki

791

Radiative Recombination in InGaN/GaN Multiple Quantum Wells

Authors: Peder Bergman, Bo Monemar, G.R. Pozina, B.E. Sernelius, P.O. Holtz, Hiroshi Amano, Isamu Akasaki

1571

Room Temperature Photoluminescence Linewidth versus Material Quality of GaN

Authors: Bo Monemar, I.A. Buyanova, Peder Bergman, Hiroshi Amano, Isamu Akasaki

1319

Heteroepitaxy of Group III Nitrides for Device Applications

Authors: Hiroshi Amano, T. Takeuchi, Hiroshi Sakai, S. Yamaguchi, C. Wetzel, Isamu Akasaki

1115

Charactrization of Residual Transition Metal Ions in GaN and AIN

Authors: J. Baur, Ulrich Kaufmann, M. Kunzer, J. Schneider, Hiroshi Amano, Isamu Akasaki, T. Detchprohm, K. Hiramatsu

Carrier Localization in Gallium Nitride

Authors: C. Wetzel, W. Walukiewicz, Eugene E. Haller, J.W. Ager, A. Chen, S. Fischer, P.Y. Yu, R. Jeanloz, I. Grzegory, Sylwester Porowski, T. Suski, Hiroshi Amano, Isamu Akasaki