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Articles by author: Isabelle Périchaud

• Detection and Characterisation of 'Sleeping' Defects in Silicon by LBIC Scan Maps at 80 K.
  Published in: Beam Injection Assessment of Defects in Semiconductors (p53)
• External Gettering for Multicrystalline Silicon Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p153)
• Gold Gettering by H⁺ or He⁺⁺ Ion Implantation Induced Cavities and Defects in Cz Silicon Wafers
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p297)
• Impact of Phosphorus Diffusion on the Contamination Level of Dislocations in Deformed Float Zone Silicon as Studied by Beam Injection Techniques
  Published in: Beam Injection Assessment of Defects in Semiconductors (p105)
• Improved P-Type or Raw N-Type Multicrystalline Silicon Wafers for Solar Cells
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p525)
• Influence of a Preliminary Phosphorus Diffusion on the Evaluation of the Recombination Strenght of Dislocations in Czochralski Silicon Wafers
  Published in: Polycrystalline Semiconductors IV (p117)
• Influence of Oxygen on External Phosphorus Gettering in Disordered Silicon Wafers
  Published in: Defects in Semiconductors 17 (p1629)
• Interaction of Impurities and Dislocations in Silicon before and after External Gettering
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p103)
• Microstructure and Electrical Properties of some Multicrystalline Silicon Billets Continuously Cast in a Cold Crucible
  Published in: Polycrystalline Semiconductors IV (p473)
• Phosphorus Diffusion Induced Reconstruction of Defect Structure in Oxygen Precipitated Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p275)
• Phosphorus External Gettering Efficiency in Multicrystalline Silicon Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p77)