HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Ivan G. Ivanov

• 6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p741)
• Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p443)
• Bound Exciton Recombination in Electron Irradiated 4H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p477)
• Cathodoluminescence of Defect Regions in SiC Epi-Films
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p653)
• Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p489)
• Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation
  Published in: Silicon Carbide and Related Materials 2011 (p605)
• CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p123)
• Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum
  Published in: Silicon Carbide and Related Materials - 2002 (p321)
• Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor
  Published in: Silicon Carbide and Related Materials 2010 (p245)
• Donor-Acceptor Pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC
  Published in: Silicon Carbide and Related Materials 2005 (p601)
• Effective-Mass Theory of Shallow Donors in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p511)
• Exciton Dynamics in Homoepitaxial GaN
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1275)
• Ga Bound Excitons in 6H-SiC
  Published in: Defects in Semiconductors 18 (p91)
• Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p103)
• High Growth Rate of α-SiC by Sublimation Epitaxy
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p143)