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Articles by author: Jan Vanhellemont

• Advances in the Understanding of Oxygen and Carbon in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p21)
• Buried Layer Processing for Advanced Bipolar Technology
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p111)
• Characterisation of High-Energy Proton Irradiation Induced Recombination Centers in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p371)
• Defect Analysis in Semiconductor Materials Based on p-n Junction Diode Characteristics
  Published in: Defects and Diffusion in Semiconductors - An Annual Retrospective IX (p1)
• Defect Engineering in Submicron CMOS Technologies
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p95)
• Defect Engineering in the Development of Advanced Silicon Crystals and Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p111)
• Defects in AS-Grown Silicon and their Evolution During Heat Treatments
  Published in: Defects in Semiconductors 19 (p341)
• Determination of Stoichiometry and Oxygen Content in Platelike and Octahedral Oxygen Precipitates in Silicon with FT-IR Spectroscopy
  Published in: Defects in Semiconductors 19 (p405)
• Differential Interference Contrast Microscopy of Defects in As-Grown and Annealed Si Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p387)
• Extended Defects in Silicon: an Old and New Story
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p263)
• First Principles Calculations of the Formation Energy of the Neutral Vacancy in Germanium
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p241)
• Grown-In Lattice Defects and Diffusion in Czochralski-Grown Germanium
  Published in: Defects and Diffusion in Semiconductors - An Annual Retrospective VII (p149)
• Improved Extraction of Si Substrate Parameters from Combined I-V and C-V Measurements on P-N Junction Diodes
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p477)
• In Situ HVEM Study of Dopant Dependent Defect Generation in Silicon during 1 MeV Electron Irradiation
  Published in: Defects in Semiconductors 16 (p303)
• Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p229)