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Articles by author: Joshua D. Caldwell

• 9 kV, 1 cm² SiC Gate Turn-Off Thyristors
  Published in: Silicon Carbide and Related Materials 2009 (p1017)
• Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2011 (p297)
• Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2007 (p345)
• Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors
  Published in: Silicon Carbide and Related Materials 2008 (p719)
• Electrical Characterization of the Graphene-SiC Heterojunction
  Published in: Silicon Carbide and Related Materials 2011 (p641)
• Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas
  Published in: Silicon Carbide and Related Materials 2010 (p119)
• Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes
  Published in: Silicon Carbide and Related Materials 2007 (p481)
• Influence of Intercalated Silicon on the Transport Properties of Graphene
  Published in: Silicon Carbide and Related Materials 2010 (p793)
• Infrared PL Signatures of n-Type Bulk SiC Substrates with Nitrogen Impurity Concentration between 10¹⁶ and 10¹⁷ cm^-3
  Published in: Silicon Carbide and Related Materials 2007 (p449)
• Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors
  Published in: Silicon Carbide and Related Materials 2008 (p291)
• Luminescence Imaging of Extended Defects in SiC via Hyperspectral Imaging
  Published in: Silicon Carbide and Related Materials 2011 (p403)
• Measurement of Local Temperatures Using µ-Raman of SiC and AlGaN-GaN/SiC Power and RF Devices
  Published in: Silicon Carbide and Related Materials 2007 (p1111)
• Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p347)
• On the Luminescence and Driving Force of Stacking Faults in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p277)
• Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors
  Published in: Silicon Carbide and Related Materials 2011 (p1013)