HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: L. Hultman

• Cathodoluminescence of Defect Regions in SiC Epi-Films
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p653)
• Damage Evolution in Al-implanted 4H SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p869)
• Development of FETs and Resistive Devices Based on Epitaxially Grown Single Layer Graphene on SiC for Highly Sensitive Gas Detection
  Published in: Silicon Carbide and Related Materials 2011 (p687)
• Doping of Silicon Carbide by Ion Implantation
  Published in: Silicon Carbide and Related Materials 2000 (p549)
• Growth and Characterization of Epitaxial Wurtzite Al_1-xIn_xN Thin Films Deposited by UHV Reactive Dual DC Magnetron Sputtering
  Published in: Silicon Carbide and Related Materials - 2002 (p987)
• Growth and Property Characterization of Epitaxial MAX-Phase Thin Films from the Ti_n+1(Si, Ge, Sn)C_n Systems
  Published in: 11th International Ceramics Congress (p2648)
• Growth Evolution of Dislocation Loops in Ion Implanted 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p315)
• Growth of Epitaxial (SiC)_x(AlN)_1-x Thin Films on 6H-SiC by Ion-Assisted Dual Magnetron Sputter Deposition
  Published in: Silicon Carbide and Related Materials 2001 (p1481)
• Growth of High Quality AIN Epitaxial Films by Hot-Wall Chemical Vapour Deposition
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1133)
• Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p991)
• Infrared Reflectance of Extremely Thin AlN Epi-Films Deposited on SiC Substrates
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p649)
• Low-Energy-Ion-Assisted Reactive Sputter Deposition of Epitaxial AlN Thin Films on 6H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p1519)
• Microstructural, Optical and Electronic Investigation of Anodized 4H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p537)
• Precipitate Formation in Heavily Al-Doped 4H-SiC Layers
  Published in: Silicon Carbide and Related Materials 2000 (p583)
• Reactive UHV Sputtering and Structural Characterization of Epitaxial AlN/6H-SiC(0001) Thin Films
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1225)