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Articles by author: L. Storasta

• Characterisation and Defects in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2001 (p9)
• Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques
  Published in: Silicon Carbide and Related Materials 2001 (p259)
• Correlation between Electrical and Optical Mapping of Boron Related Complexes in 4H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p423)
• Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p489)
• Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity
  Published in: Silicon Carbide and Related Materials 2007 (p111)
• Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient
  Published in: Silicon Carbide and Related Materials 2006 (p81)
• Doping of Silicon Carbide by Ion Implantation
  Published in: Silicon Carbide and Related Materials 2000 (p549)
• Electrical Activity of Residual Boron in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2001 (p549)
• Electroluminescence From Implanted and Epitaxially Grown pn-Diodes
  Published in: Silicon Carbide and Related Materials - 1999 (p687)
• Enhanced Annealing of the Main Lifetime Limiting Defect in Thick 4H-SiC Layers
  Published in: Silicon Carbide and Related Materials 2007 (p477)
• Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization
  Published in: Silicon Carbide and Related Materials 2003 (p221)
• HTCVD Grown Semi-Insulating SiC Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p33)
• Implantation Temperature Dependent Deep Level Defects in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p443)
• Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p991)
• Investigations of Possible Nitrogen Participation in the Z₁/Z₂ Defect in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p469)