Papers by Author: M. Bassler

Paper TitlePage

Oxidation of Silicon Carbide: Problems and Solutions
Authors: Valeri V. Afanas'ev, M. Bassler, Gerhard Pensl, Andre Stesmans
961
Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility
Authors: M. Bassler, Valeri V. Afanas'ev, Gerhard Pensl, M. Schulz
1065
Physics of SiC Processing
Authors: Gerhard Pensl, Valeri V. Afanas'ev, M. Bassler, Thomas Frank, Michael Laube, Michael Weidner
831
MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation
Authors: Hiroshi Yano, Tsunenobu Kimoto, Hiroyuki Matsunami, M. Bassler, Gerhard Pensl
1109
Interface State Density at Implanted 6H SiC/SiO2 MOS Structures
Authors: M. Bassler, Valeri V. Afanas'ev, Gerhard Pensl
861
High Resolution Photoemission Study of the 6H-SiC/SiO2 Interface
Authors: B. Mattern, M. Bassler, Gerhard Pensl, Lothar Ley
375
Showing 1 to 6 of 6 Paper Titles