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Articles by author: M.S. Kagan

• Acceptor States in Boron Doped SiGe Quantum Wells
  Published in: Defects in Semiconductors 19 (p91)
• Acceptor States in Boron Doped SiGe Quantum Wells
  Published in: Defects in Semiconductors 19 (p1613)
• Confinement Levels in Passivated SiGe/Si Quantum Well Structures
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p541)
• Localization of Nondegenerate Electrons at Random Potential of Charged Impurities
  Published in: Defects in Semiconductors 19 (p65)
• Low-Voltage Lasing of p-Ge under Uniaxial Stress
  Published in: Ultrafast Phenomena in Semiconductors 2001 (p189)
• Mobility Edge in Nondegenerate Semiconductor with Random Potential of Charged Impurities
  Published in: Ultrafast Phenomena in Semiconductors (p53)
• Quantum Well Related Conductivity and Deep Traps in SiGe/Si Structures
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p489)
• Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge
  Published in: Defects in Semiconductors 19 (p71)
• Resonant Acceptor States and Stimulated THz Emission in Semiconductors and Semiconductor Structures
  Published in: Ultrafast Phenomena in Semiconductors 2001 (p181)
• Shallow Acceptor States in SiGe Quantum Wells
  Published in: Ultrafast Phenomena in Semiconductors (p233)
• Weak Localization in SiGe Quantum Wells Doped with Boron
  Published in: Ultrafast Phenomena in Semiconductors 2001 (p35)