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Papers by Author: M. Selder

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Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, ¹³C Labeling of Source Material and Numerical Modeling

Authors: Peter J. Wellmann, Z.G. Herro, M. Selder, F. Durst, Roland Püsche, Martin Hundhausen, Lothar Ley, Albrecht Winnacker

Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals

Authors: M. Selder, L. Kadinski, F. Durst, Thomas L. Straubinger, Peter J. Wellmann, Dieter Hofmann

Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions

Authors: Erwin Schmitt, Michael Rasp, Arnd Dietrich Weber, M. Kölbl, Robert Eckstein, L. Kadinski, M. Selder

Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process

Authors: Peter J. Wellmann, Dieter Hofmann, L. Kadinski, M. Selder, Thomas L. Straubinger, Albrecht Winnacker

Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation

Authors: Peter J. Wellmann, Matthias Bickermann, Dieter Hofmann, L. Kadinski, M. Selder, Thomas L. Straubinger, Albrecht Winnacker

Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth

Authors: M. Selder, L. Kadinski, F. Durst, Thomas L. Straubinger, Dieter Hofmann, Peter J. Wellmann

Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions

Authors: Thomas L. Straubinger, Matthias Bickermann, M. Grau, Dieter Hofmann, L. Kadinski, Stephan G. Müller, M. Selder, Peter J. Wellmann, Albrecht Winnacker