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Articles by author: M. Selder

• Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions
  Published in: Silicon Carbide and Related Materials 2000 (p15)
• Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
  Published in: Silicon Carbide and Related Materials - 1999 (p71)
• Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth
  Published in: Silicon Carbide and Related Materials - 1999 (p31)
• Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions
  Published in: Silicon Carbide and Related Materials - 1999 (p39)
• Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process
  Published in: Silicon Carbide and Related Materials 2000 (p11)
• Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, ¹³C Labeling of Source Material and Numerical Modeling
  Published in: Silicon Carbide and Related Materials - 2002 (p9)
• Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals
  Published in: Silicon Carbide and Related Materials 2000 (p65)