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Articles by author: Maurizio Masi

• Detailed Modeling of Barrel Chemical Vapor Deposition Reactors
  Published in: Advances in Crystal Growth (p203)
• Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor
  Published in: Silicon Carbide and Related Materials 2004 (p57)
• Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route
  Published in: Silicon Carbide and Related Materials 2006 (p93)
• Modeling of Dislocation Formation during InP LEC Growth: A Comparison among the Thermoelastic and the Thermoplastic Approaches
  Published in: Advances in Crystal Growth (p187)
• Modeling of Growth Processes in Epitaxial Reactors
  Published in: Theoretical and Technological Aspects of Crystal Growth (p135)
• New Achievements on CVD Based Methods for SiC Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2004 (p67)