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Articles by author: Michael Seibt

• Microstructural and Electrical Properties of NiSi₂ Precipitates at Dislocations in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p447)
• Behaviour of the Size Distribution Function of End-of-Range Dislocation Loops during Silicon Oxidation
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p205)
• Comparison of Efficiency and Kinetics of Phosphorus-Diffusion and Aluminum Gettering of Metal Impurities in Silicon: a Simulation study
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p229)
• Contrastive Recombination Behaviour of Metal Silicide and Oxygen Precipitates in n-Type Silicon: Attempt at an Explanation
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p365)
• Depth Dependence of Dislocation Loop Dissolution Kinetics in Ion Implanted Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p377)
• Electrical Activity of Dislocations in Si Decorated by Ni
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p361)
• Electrical Properties of Clustered and Precipitated Iron in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p109)
• Epitaxial Growth Due to Phase Separation of Disordered Eutectic Au:Si Alloys on Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p617)
• Evolution of Amorphous/Crystalline Interfacial Roughness and End-of-Range Defects during Solid-Phase Epitaxial Regrowth of Ge Implaned Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p463)
• Formation and Properties of Metastable Silicide Precipitates in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p283)
• Impact of Hydrogenation on Electrical Properties of NiSi₂ Precipitates in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p279)
• Impact of NiSi₂ Precipitates Electronic Structure on the Minority Carrier Lifetime in n-and p-Type Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p155)
• Influence of the Dislocation Travel Distance on the DLTS Spectra of Dislocations in Cz-Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p175)
• Interaction of Interstitially Dissolved Cobalt and Oxygen-Related Centres in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p553)
• Mapping Interfacial Roughness and Composition in Elemental Semiconductor Systems
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p615)