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Articles by author: Mike F. MacMillan

• Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers
  Published in: Silicon Carbide and Related Materials 2006 (p323)
• Cathodoluminescence of Defect Regions in SiC Epi-Films
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p653)
• Chromium in 4H and 6H SiC: Photoluminescence and Zeeman Studies
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p603)
• Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates
  Published in: Silicon Carbide and Related Materials 2006 (p69)
• Domain Occurance in SiC Epitaxial Layers Grown by Sublimation
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p151)
• Growth of High Quality AIN Epitaxial Films by Hot-Wall Chemical Vapour Deposition
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1133)
• High Growth Rate of α-SiC by Sublimation Epitaxy
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p143)
• Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor
  Published in: Silicon Carbide and Related Materials 2005 (p175)
• Infrared Reflectance of Extremely Thin AlN Epi-Films Deposited on SiC Substrates
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p649)
• Micropipe Dissociation through Thick n⁺ Buffer Layer Growth
  Published in: Silicon Carbide and Related Materials 2007 (p167)
• Multi-Wafer VPE Growth and Characterization of SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials - 1999 (p173)
• Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p59)
• Photoluminescence Study of C-H and C-D Centers in 4H SiC
  Published in: Silicon Carbide and Related Materials 2003 (p589)
• Scaling of Chlorosilane SiC CVD to Multi-Wafer Epitaxy System
  Published in: Silicon Carbide and Related Materials 2006 (p145)
• Sense Determination of c-Axis Screw Dislocations in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p297)