HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Murugesu Yoganathan

• Advanced PVT Growth of 2 & 3-Inch Diameter 6H SiC Crystals
  Published in: Silicon Carbide and Related Materials 2003 (p75)
• Characterization of Dislocations and Micropipes in 4H n⁺ SiC Substrates
  Published in: Silicon Carbide and Related Materials 2007 (p333)
• Characterization of SiC Substrates Using X-Ray Rocking Curve Mapping
  Published in: Silicon Carbide and Related Materials 2005 (p729)
• Correlation between Room Temperature Photoluminescence and Resistivity in Semiinsulating Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2005 (p717)
• Dislocation in 4H n⁺ SiC Substrates and their Relationship with Epilayer Defects
  Published in: Silicon Carbide and Related Materials 2006 (p247)
• Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport
  Published in: Silicon Carbide and Related Materials 2004 (p9)
• Growth of Undoped (Vanadium-Free) Semi-Insulating 6H-SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2004 (p35)
• Status of Large Diameter SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2011 (p3)
• Status of Large Diameter SiC Single Crystals at II-VI
  Published in: Silicon Carbide and Related Materials 2007 (p35)
• Transmission Electron Microscopy Study of GaN on SiC on SIMOX Grown by Metalorganic Chemical Vapor Deposition
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1239)
• X-Ray Rocking Curve Characterization of SiC Substrates
  Published in: Silicon Carbide and Related Materials 2007 (p361)