Papers by Author: N. Achtziger

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Polytype Dependence of Transition Metal-Related Deep Levels in 4H-, 6H- and 15R-SiC
Authors: Joachim Grillenberger, N. Achtziger, G. Pasold, W. Witthuhn
573
Tantalum and Tungsten in Silicon Carbide: Identification and Polytype Dependence of Deep Levels
Authors: Joachim Grillenberger, N. Achtziger, G. Pasold, R. Sielemann, W. Witthuhn
475
Band Gap States of Cr in the Lower Part of the SiC Band Gap
Authors: G. Pasold, N. Achtziger, Joachim Grillenberger, W. Witthuhn
471
Quantitative Modeling of Hydrogen Diffusion and Reactivation of H-Passivated Al-Acceptors in SiC
Authors: C. Hülsen, N. Achtziger, J. Herold, W. Witthuhn
331
Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen
Authors: N. Achtziger, C. Hülsen, Martin S. Janson, Margareta K. Linnarsson, Bengt Gunnar Svensson, W. Witthuhn
933
Reactivation of Hydrogen-Passivated Aluminum Acceptors in p-type SiC
Authors: C. Hülsen, N. Achtziger, U. Reislöhner, W. Witthuhn
929
On the Existence of Deep Levels of the Acceptors Ga and In and of the Potential Double Acceptors Zn and Cd in SiC
Authors: N. Achtziger, Joachim Grillenberger, M. Uhrmacher, W. Witthuhn
749
Photoluminescence and DLTS Measurements of 15MeV Erbium Implanted 6H and 4H SiC
Authors: Y. Shishkin, Wolfgang J. Choyke, Robert P. Devaty, N. Achtziger, Th. Opfermann, W. Witthuhn
639
Radiotracer Identification of Ti, V and Cr Band Gap States in 4H- and 6H-SiC
Authors: N. Achtziger, Joachim Grillenberger, W. Witthuhn
541
Identifitcation of Bandgap States in Semiconductors by Transmutation of Implanted Radioactive Tracers
Authors: N. Achtziger
113
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