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Articles by author: N.Q. Khánh

• Charge Carrier Lifetime Modificaiton in Silicon by High Energy H⁺, He⁺ Ion Implantation
  Published in: Materials Science Applications of Ion Beam Techniques (p101)
• Damage Distributions Induced by Channeling Implantation of Nitrogen into 6H Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 2002 (p645)
• Ellipsometric Study of Ion-Implantation Damage in Single-Crystal Silicon - An Advanced Optical Model
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p765)
• Ion Beam Analysis and Computer Simulation of Damage Accumulation in Nitrogen Implanted 6H-SiC: Effects of Channeling
  Published in: Silicon Carbide and Related Materials 2004 (p637)
• Ion Bombardment Induced Damage in Silicon Carbide Studied by Ion Beam Analytical Methods
  Published in: Silicon Carbide and Related Materials 2000 (p271)
• Ion Implantation Induced Damage Accumulation Studied by Rutherford Backscattering Spectrometry and Spectroscopic Ellipsometry
  Published in: Materials Science Applications of Ion Beam Techniques (p229)