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Articles by author: Niklas Rorsman

• A Comparison between Physical Simulations and Experimental Results in 4H-SiC MESFETs with Non-Constant Doping in the Channel and Buffer Layers
  Published in: Silicon Carbide and Related Materials 2000 (p699)
• A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p737)
• Characterization of SiC MESFETs on Conducting Substrates
  Published in: Silicon Carbide and Related Materials - 1999 (p1255)
• Design and Characterization of a SiC Schottky Diode Mixer
  Published in: Silicon Carbide and Related Materials - 1999 (p1207)
• Development of a Microstrip SiC MMIC Process
  Published in: Silicon Carbide and Related Materials 2005 (p1123)
• Evaluation of SiC MESFET Structures Using Large-Signal Time-Domain Simulations
  Published in: Silicon Carbide and Related Materials 2001 (p1395)
• Fabrication, Characterization, and Modeling of SiC MESFETs
  Published in: Silicon Carbide and Related Materials - 1999 (p1259)
• High CW Power 0.3 μm Gate AlGaN/GaN HEMTs Grown by MBE on Sapphire
  Published in: Silicon Carbide and Related Materials 2003 (p1629)
• High Frequency Measurements and Simulations of SiC MESFETs up to 250°C
  Published in: Silicon Carbide and Related Materials 2003 (p1209)
• Influence of Passivation Oxide Properties on SiC Field-Plated Buried Gate MESFETs
  Published in: Silicon Carbide and Related Materials 2007 (p1103)
• Investigation of the Scalability of 4H-SiC MESFETs for High Frequency Applications
  Published in: Silicon Carbide and Related Materials 2003 (p1229)
• Optimization of SiC MESFET for High Power and High Frequency Applications
  Published in: Silicon Carbide and Related Materials 2010 (p629)
• Performance of Silicon Carbide Microwave MESFETs Using a Thin p-Doped Buffer Layer
  Published in: Silicon Carbide and Related Materials - 2002 (p741)
• Planar Schottky Microwave Diodes on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p937)
• SiC MESFET with a Double Gate Recess
  Published in: Silicon Carbide and Related Materials 2005 (p1227)