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Articles by author: Örjan Danielsson

• Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters
  Published in: Silicon Carbide and Related Materials 2001 (p203)
• Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using Simulation
  Published in: Silicon Carbide and Related Materials 2000 (p99)
• Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations
  Published in: Silicon Carbide and Related Materials 2000 (p91)
• Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2001 (p219)
• Predictions of Nitrogen Doping in SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials - 2002 (p137)
• Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth Processes
  Published in: Silicon Carbide and Related Materials 2004 (p3)
• SiC and III-Nitride Growth in Hot-Wall CVD Reactor
  Published in: Silicon Carbide and Related Materials 2004 (p61)