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Articles by author: P. Zaumseil

• An Experimental Study of Ion Beam and ECR Hydrogenation of Self-Ion Implantation Damage in Silicon by Admittance Spectroscopy and X-Ray Triple Crystal Diffractometry
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p483)
• Characterization of Semiconductor Films Epitaxially Grown on Thin Metal Oxide Buffer Layers
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p467)
• Defect Generation in Cz-Silicon Used for the Design of Synchrotron Monochromator Crystals
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p455)
• Dependence of Phosphorus Transient Enhanced Diffusion on Depth Position of Extended Defects in Ion Implanted Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p243)
• Deposition and P Doping of Si_(1-x)Ge_x Layers in a Conventional Horizontal Tube APCVD Reactor without Load Lock System
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p409)
• Equilibrium Critical Thickness of Strained Buried SiGe Layers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p149)
• Growth and Characteristics of Low Trap Density Ultrathin [4-7 nm] Gate Oxides for SiGe Quantum Well MOS Structures
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p167)
• Highly Doped Microcrystalline SiGe Films: Structure and Transport Properties
  Published in: Polycrystalline Semiconductors V (p149)
• In Situ X-Ray Investigation of Relaxation Processes in Si_1-xGe_x Layers on Silicon Substrate
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p535)
• Investigation of Defect Generation and Precipitation in Antimony Implanted Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p273)
• Micro-Raman Investigations of Elastic and Plastic Strain Relief in Si_1-xGe_x-Heterostructures
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p577)
• Precise Measurement of Ge Depth Profiles in SiGe HBT's - a Comparison of Different Methods
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p473)
• Pressure-Assisted Lateral Nanostructuring of the Epitaxial Silicon Layers with SiGe Quantum Wells
  Published in: High Pressure Technology of Nanomaterials (p291)
• Process Induced Defects in TiSi₂-N⁺/P-Structures
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p379)
• Relaxation Phenomena in Strained Si_1-xGe_x Layers on Planar and Differently Patterned Si Substrates
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p451)