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Articles by author: Patrick R. Briddon

• Stacking Fault – Stacking Fault Interactions and Cubic Inclusions in 6H-SiC: an Ab Initio Study
  Published in: Silicon Carbide and Related Materials - 2002 (p921)
• Structural and Electrical Properties of Threading Dislocations in GaN
  Published in: Defects in Semiconductors 19 (p1203)
• Structure and Electronic Properties of Nitrogen Defects in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p93)
• The Effect of Interface Engineering and Wave Function Localisation on Optical Response in Imperfect Type I and Type II Quantum Well Structures
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p491)
• The Hydrogen-Saturated Self-Interstitial in Silicon and Germanium
  Published in: Defects in Semiconductors 19 (p35)
• Theoretical Aspects on the Formation of the Tri-Interstitial Nitrogen Defect in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p265)
• Theoretical Calculation of Stacking Fault Energies in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2001 (p439)
• Theoretical Investigations of the Diffusion of Nitrogen-Pair Defects in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p407)
• Theoretical Investigations of the Energy Levels of Defects in Germanium
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p697)
• Theoretical Study of Cubic Polytype Inclusions in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p533)
• Theory of Gold-Hydrogen Complexes in Silicon
  Published in: Defects in Semiconductors 19 (p295)
• Theory of Nitrogen Aggregates in Diamond: The H3 and H4 Defects
  Published in: Defects in Semiconductors 17 (p45)
• Theory of Nitrogen and Platelets in Diamond
  Published in: Defects in Semiconductors 16 (p457)
• Theory of the NiH₂ Complex in Si and the CuH₂ Complex in GaAs
  Published in: Defects in Semiconductors 18 (p921)
• Vacancy- and Acceptor- H Complxes in Inp
  Published in: Defects in Semiconductors 18 (p969)