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Articles by author: Paul B. Klein

• CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2009 (p211)
• Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2005 (p493)
• Electron Paramagnetic Resonance of the Mn-Impurity in ZnS Nanocrystals
  Published in: Defects in Semiconductors 18 (p737)
• Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers
  Published in: Silicon Carbide and Related Materials 2007 (p485)
• High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl
  Published in: Silicon Carbide and Related Materials 2007 (p103)
• Identification of Defects Limiting the Carrier Lifetime in n^- Epitaxial Layers of 4H-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p193)
• Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes
  Published in: Silicon Carbide and Related Materials 2007 (p481)
• Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors
  Published in: Silicon Carbide and Related Materials 2008 (p291)
• Nonequilibrium Carrier Recombination in Highly Excited Bulk SiC Crystals
  Published in: Silicon Carbide and Related Materials 2009 (p215)
• Photoluminescence Excitation Spectroscopy of Cubic SiC Grown by Chemical Vapor Deposition on Si Substrates
  Published in: Defects in Semiconductors 16 (p1195)
• Photoluminescence Study of Fe²⁺ in InP_1-xAs_x:Fe Alloys
  Published in: Defects in Semiconductors 14 (p1117)
• Semi-Insulating Behavior in Undoped LEC InP after Annealing in Phosphorous
  Published in: Defects in Semiconductors 14 (p1259)
• Spectroscopic Investigation of the Er Site in GaAs:Er
  Published in: Defects in Semiconductors 16 (p665)
• Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2009 (p203)
• Triplet Spin ODMR from Phosphorous Antisites in Undoped InP
  Published in: Defects in Semiconductors 14 (p271)