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Articles by author: Pierre Ferret

• Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
  Published in: Silicon Carbide and Related Materials 2001 (p1161)
• Epitaxial Growth of 6H-SiC by a Vapor Liquid Solid Method
  Published in: Silicon Carbide and Related Materials - 2002 (p201)
• Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p141)
• Growth of Cubic Silicon Carbide Crystals from Solution
  Published in: Silicon Carbide and Related Materials 2005 (p123)
• Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth
  Published in: Silicon Carbide and Related Materials 2003 (p731)
• Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth Processes
  Published in: Silicon Carbide and Related Materials 2004 (p3)
• Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2001 (p223)