Papers by Author: Reinhold Schörner

Abstract: We present first results on power cycling of 6.5 kV SiC PiN-diodes mounted into a molded package. The geometry of this lateral package was designed to fulfill the specifications of the electrical isolation and the creepage distances in the high voltage region of 6.5 kV. To evaluate the suitability of this package we used high voltage SiC PiN-diodes. The diodes were soldered onto a copper lead frame, wire bonded and covered by molding compound. The packaged diodes were characterized by electrical measurements before and during a power cycling test with a temperature swing of 90 K. These results showed long term stable behavior of the I-V characteristics of the diodes as well as the suitability of the package for high temperature and high voltage application of SiC devices.

Abstract: After the successful introduction of silicon carbide Schottky-Barrier diodes in 2001, next commercial devices will be switching components. The development focus is targeted to MOSFETs and VJFETs. Regarding VJFETs, a promising device was presented several years ago and tested successfully in several applications. Since the unconventional device structure does not allow the use of classical JFET models, a new electro-thermal model was developed, taking into account the features of the design as well as the targeted enlarged range of operating temperatures.

Abstract: Large area 4H-SiC PIN diodes have been fabricated which exhibit a stable avalanche ranging between 4.5 and 5.5 kV. The avalanche occurs at an electrical field strength of 2.1 MV/cm at the pn junction. The temperature coefficient of the avalanche is positive (0.3 V/K). The avalanche is tested in DC mode. The device concept as well as the fabrication process is described in detail. Static and dynamic characteristics are shown.