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Articles by author: Ricardo Reitano

• Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2004 (p485)
• Defects in He⁺ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements
  Published in: Silicon Carbide and Related Materials 2003 (p493)
• Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes
  Published in: Silicon Carbide and Related Materials 2004 (p429)
• Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process
  Published in: Silicon Carbide and Related Materials 2005 (p163)
• New Achievements on CVD Based Methods for SiC Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2004 (p67)
• Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p373)
• SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor
  Published in: Silicon Carbide and Related Materials 2005 (p179)