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Articles by author: Robert J. Falster

• A Perspective from Crystal Growth and Wafer Processing on the Properties of Intrinsic Point Defects in Silicon
  Published in: Defects and Diffusion in Semiconductors IV (p125)
• An Investigation of the Possibility that Oxygen Diffusion in Czochralski Silicon is Catalyzed during Clustering
  Published in: Defects in Semiconductors 19 (p347)
• Anomalous Out-Diffusion Profiles of Nitrogen in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p149)
• Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low Temperatures
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p43)
• Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p123)
• Elastic Instability of Strained Spherical Precipitates as a Cause of Oxide Platelets in Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p121)
• Evolution of Thermal Donors in Silicon Enhanced by Self-Interstitials
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p387)
• Gettering in Silicon by Oxygen Related Defects, Stacking Faults and Thin Polycrystalline Films
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p13)
• Gettering of Copper and Iron to Extended Surface Defects in Silicon
  Published in: Defects in Semiconductors 16 (p185)
• Gettering of Copper and Nickel in Czochralski Silicon by Oxide Particles: Assessment of Thermal Stability
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p33)
• Gettering of Copper and Nickel in Czochralski Silicon by Oxide Particles: Dependence on Oxide Particle Density and Cooling Rate
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p39)
• Gettering of Low Concentration Copper, Nickel and Iron Contamination in Czochralski Silicon Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p177)
• Intrinsic Point Defects in Silicon: a Unified View from Crystal Growth, Wafer Processing and Metal Diffusion
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p1)
• Metals, Oxide Precipitates and Minority Carrier Lifetime in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p359)
• Morphological Transformation of Oxide Particles and Thresholds for Effective Gettering in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p97)