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Articles by author: Rong Jun Wang

• Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2003 (p581)
• Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors
  Published in: Silicon Carbide and Related Materials - 2002 (p145)
• Contact Damage of Model Dental Multilayers: Experiments and Finite Element Simulations
  Published in: Functional Biomaterials (p135)
• Dislocations in Quasicrystals
  Published in: Defect and Diffusion Forum Vols. 125-126 (p19)
• Electro-Chemical Mechanical Polishing of Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2003 (p801)
• In Situ Etching of SiC Wafers in a CVD System Using Oxygen as the Source
  Published in: Silicon Carbide and Related Materials 2001 (p303)
• Vapor-Phase Epitaxial Growth of n-Type SiC Using Phosphine as the Precursor
  Published in: Silicon Carbide and Related Materials 2001 (p211)