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Papers by Author: S.A. Goodman

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Processing-Induced Defects in Epitaxially Grown p- and n-Type SiGe

Authors: M. Mamor, F. Danie Auret, S.A. Goodman

161

Electrical Characterization of Defects Introduced During Plasma-Based Processing of GaAs

Authors: F. Danie Auret, S.A. Goodman, G. Myburg, W.E. Meyer, Prakash N.K. Deenapanray, M. Murtagh, Shu-Ren Ye, H.J. Masterson, J.T. Beechinor, G.M. Crean

1045

ODMR Investigation of Proton Irradiated GaAs

Authors: S.A. Goodman, F.K. Koschnick, Ch. Weber, Johann Martin Spaeth, F. Danie Auret

1021

Electrical and Optical Characterisation of Defects Induced in Epitaxially Grown n-Si During 1 keV Noble Gas Ion Bombardment

Authors: Prakash N.K. Deenapanray, F. Danie Auret, G. Myburg, W.E. Meyer, S.A. Goodman

565

Electronic Properties of Defects Introduced in n- and p-Type Si_1-xGe_x During Ion Etching

Authors: S.A. Goodman, F. Danie Auret, M. Mamor, Prakash N.K. Deenapanray, W.E. Meyer

133

Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si_1-xGe_x

Authors: M. Mamor, F. Danie Auret, S.A. Goodman, G. Myburg, Prakash N.K. Deenapanray, W.E. Meyer

115

Electrical and Defect Characterization of Sputter Deposited Au and Cr Schottky Barrier Diodes on GaAs

Authors: S.A. Goodman, F. Danie Auret, Y. Leclerc

1955

Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAs

Authors: F. Danie Auret, S.A. Goodman, W.E. Meyer

1067

The Effect of Metallization Induced Defects on Metal-Semiconductor Contacts

Authors: S.A. Goodman, F. Danie Auret, G. Myburg, C. Schutte

391

Electronic Properties of Defects Introduced during Electron and Alpha Irradiation of GaAs

Authors: F. Danie Auret, S.A. Goodman, W.E. Meyer, R.M. Erasmus, G. Myburg

1559