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Articles by author: S. Banerjee

• 930, 170Ω.cm² Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing
  Published in: Silicon Carbide and Related Materials 2003 (p1413)
• Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p757)
• Design and Implementation of RESURF MOSFETs in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p715)
• Glass Formation and Crystallization in Some Zr Based Binary and Ternary Alloys
  Published in: Rapid Solidification (p201)
• Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2001 (p1041)
• Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs
  Published in: Silicon Carbide and Related Materials 2001 (p1089)
• Interface Properties of 4H-SiC/SiO₂ with MOS Capacitors and FETs Annealed in O₂, N₂O, NO and CO₂
  Published in: Silicon Carbide and Related Materials 2003 (p1309)
• Microscopic and Macroscopic Instabilities in Omega Forming Systems
  Published in: Non Linear Phenomena in Materials Science III (p267)
• Nitrogen vs. Phophorus as Implant Species for High-Voltage Lateral RESURF MOSFETs on 4H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p1279)
• Superplastic Forming of Zircaloy-2 Pressure Tube Material
  Published in: Superplasticity in Advanced Materials - ICSAM-97 (p663)