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Papers by Author: S. Karlsson

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Metal-contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC

Authors: Margareta K. Linnarsson, Anita Lloyd Spetz, Martin S. Janson, Lars-G. Ekedahl, S. Karlsson, Adolf Schöner, Ingemar Lundström, Bengt Gunnar Svensson

937

4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

Authors: Evgenia V. Kalinina, A.S. Zubrilov, V. Solov'ev, N.I. Kuznetsov, Anders Hallén, Andrey O. Konstantinov, S. Karlsson, S.V. Rendakova, Vladimir Dmitriev

505

Epitaxial Growth of β-SiC on Ion-Beam Synthesized β-SiC: Structural Characterization

Authors: A. Romano-Rodríguez, A. Pérez-Rodríguez, C. Serre, J.R. Morante, Jaume Esteve, M.C. Acero, Reinhard Kögler, Wolfgang Skorupa, Mikael Östling, Nils Nordell, S. Karlsson, J. Van Landuyt

309

Studies of the Ambient Dependent Inversion of Catalytic Metal - Oxide - Silicon Carbide Devices Based on 6H- and 4H-SiC Material

Authors: Peter Tobias, A. Baranzahi, Ingemar Lundström, Adolf Schöner, K. Rottner, S. Karlsson, P. Mårtensson, Anita Lloyd Spetz

1089

SiC Surface Engineering for High Voltage JFET Applications

Authors: Pavel A. Ivanov, O.I. Kon'kov, Andrey O. Konstantinov, V.N. Panteleev, Tat'yana P. Samsonova, Nils Nordell, S. Karlsson, Chris I. Harris

1081

Deuterium Incorpoation in Acceptor Doped Epitaxial Layers of 6H-SiC

Authors: Margareta K. Linnarsson, Martin S. Janson, Adolf Schöner, Nils Nordell, S. Karlsson, Bengt Gunnar Svensson

761

Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy

Authors: Thomas Frank, T. Troffer, Gerhard Pensl, Nils Nordell, S. Karlsson, Adolf Schöner

681

AFM Study of In Situ Etching of 4H and 6H SiC Substrates

Authors: S. Karlsson, Nils Nordell

363

Growth of 4H and 6H SiC Trenches and Around Stripe Mesas

Authors: Nils Nordell, S. Karlsson, Andrey O. Konstantinov

131